Programmable III-nitride semiconductor device

ABSTRACT

A III-nitride semiconductor device which includes a charged gate insulation body.

This is a continuation of application Ser. No. 13/472,258 filed May 15,2012.

RELATED APPLICATION

This application is based on and claims the benefit of U.S. ProvisionalApplication Ser. No. 60/703,931, filed on Jul. 29, 2005, entitledNORMALLY OFF III-NITRIDE SEMICONDUCTOR DEVICE HAVING A PROGRAMMABLEGATE, to which a claim of priority is hereby made and the disclosure ofwhich is incorporated by reference.

FIELD OF THE INVENTION

The present application relates to power semiconductor devices, and moreparticularly to III-nitride power semiconductor devices.

DEFINITION

As referred to herein a III-nitride semiconductor refers to asemiconductor alloy from the InAlGaN system, including, but not limitedto, GaN, AlGaN, AlN, InGaN, InAlGaN, and the like.

BACKGROUND OF THE INVENTION

A conventional III-nitride heterojunction power semiconductor deviceincludes one III-nitride semiconductor body of one band gap disposedover another III-nitride semiconductor body of another band gap to forma two dimensional electron gas that serves as a conduction channelbetween the power electrodes of the device. III-nitride heterojunctionpower semiconductor devices are commercially desirable because of theirhigh band gap and high current carrying capabilities. However, a typicalIII-nitride power semiconductor device is normally ON. Generallyspeaking, a normally ON power semiconductor device is less desirable inthat it requires additional circuitry to keep its channel open in orderto render the same OFF.

It is, therefore, desirable to have a normally off III-nitride powersemiconductor device.

SUMMARY OF THE INVENTION

A semiconductor device according to the present invention includes afirst III-nitride semiconductor body having a band gap, a secondIII-nitride semiconductor body having another band gap over the firstIII-nitride semiconductor body to form a III-nitride heterojunctionhaving a two dimensional electron gas, a first power electrode coupledto the second III-nitride semiconductor body, a second power electrodecoupled to the second III-nitride semiconductor body, a gate insulationbody having charge (e.g. negative charge) trapped in the body thereofover the second III-nitride semiconductor body, and a gate electrodedisposed over the gate insulation body.

According to one aspect of the present invention the charge in the gateinsulation body is selected to interrupt the two dimensional electrongas.

According to another aspect of the present invention the charge in thegate insulation body can be varied to obtain a desired thresholdvoltage.

In a device according to the present invention, first III-nitridesemiconductor body is comprised of one semiconductor alloy from theInAlGaN system, e.g., preferably, GaN, and the second III-nitridesemiconductor body is comprised of another semiconductor alloy from theInAlGaN system, e.g., preferably, AlGaN.

According to an aspect of the present invention, gate insulation bodyincludes at least one gate insulation body, e.g., preferably, Si₃N₄,disposed adjacent another, different insulation body, e.g., preferably,SiO₂. The present invention, however, is not limited to two insulationbodies, rather, the gate insulation body can include any number ofalternately arranged first and second insulation bodies.

A semiconductor device according to the present invention may be formedas a discrete device over a substrate such as a silicon substrate, asilicon carbide substrate, or a sapphire substrate; or it may be formedas part of an integrated circuit alongside other elements in a commonsemiconductor body.

A device according to the present invention can be fabricated bydisposing one III-nitride semiconductor body having one band gap overanother III-nitride semiconductor body of another band gap to obtain atwo dimensional electron gas, coupling a first and a second powerelectrode to the second III-nitride semiconductor body, forming acharged gate insulation body (e.g., preferably, negatively charged) overthe second III-nitride semiconductor body, and forming a gate electrodeover the charged gate insulation body.

A gate insulation body according to the present invention can be formedby forming one insulation body over another insulation body, andapplying a bias to the gate electrode while heating the gate insulationbody.

Alternatively, but not necessarily, the gate insulation body accordingto the present invention can be formed by forming a charged oneinsulation body adjacent another insulation body, and then heating thegate insulation body.

A gate insulation body can also be formed by forming one insulation bodyadjacent another insulation body, and implanting dopants into at leastone of the insulation bodies. This may be followed by heating the gateinsulation body if desired. The dopant species can be any one or acombination of Fluorine, Bromine, Iodine, and Chlorine atoms, forexample. Note that any one of these techniques allows for adjusting thethreshold voltage of the gate, and thus allows the gate to beprogrammable.

Other features and advantages of the present invention will becomeapparent from the following description of the invention which refers tothe accompanying drawings.

BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 schematically shows a cross-sectional view of the active regionof a III-nitride power semiconductor device according to the prior art.

FIG. 2 schematically shows a cross-sectional view of the active regionof a III-nitride heterojunction power device according to the firstembodiment of the present invention.

FIG. 3 schematically shows a cross-sectional view of the active regionof a III-nitride heterojunction power device according to the secondembodiment of the present invention.

FIG. 4 schematically shows a cross-sectional view of a portion of thegate structure of a III-nitride heterojunction power device according tothe third embodiment of the present invention.

DETAILED DESCRIPTION OF THE FIGURES

FIG. 1 illustrates an example of a typical III-nitride heterojunctionhigh electron mobility transistor (HEMT). Specifically, a HEMT accordingto the prior art includes a first III-nitride semiconductor body 10having one band gap, which may be composed of, for example, GaN, and asecond III-nitride semiconductor body 12 having another band gap, whichmay be composed of, for example, AlGaN, disposed over firstsemiconductor body 10. First semiconductor body 10 may be formed over atransition body 8 composed, for example, of AlN, which is itself formedover substrate 6. As is known, transition body 8 could be a series oflayers including GaN, AlGaN, AlN, InGaAlN in various orders, to relievestress due to the mismatch of a hetero-epitaxial layer with a substrate.Substrate 6 is preferably formed from Si, but may be formed from SiC,Sapphire, or the like. Alternatively, substrate 6 may be formed from abulk III-nitride semiconductor (e.g. bulk GaN) which is compatible withfirst semiconductor body 10, in which case transition body 8 may beeliminated.

As is well known, the heterojunction of first III-nitride semiconductorbody 10 and second III-nitride semiconductor body 12 results in theformation of a conductive region usually referred to as a twodimensional electron gas or 2DEG 14. Current may be conducted between afirst power electrode 16 (which is preferably ohmically coupled tosecond semiconductor body 12), and second power electrode 18 (which ispreferably also ohmically coupled to second semiconductor body 12)through 2DEG 14.

A conventional HEMT, such as the one seen in FIG. 1, is a normally ONdevice. In many applications it is desirable to have a normally OFFdevice. Thus, a gate structure 20 may be disposed between first powerelectrode 16 and second power electrode 18. Gate structure 20 includesat least a gate electrode which may be electrically insulated by a gateinsulation and thus capacitively couple to second III-nitridesemiconductor body 12. The application of an appropriate voltage to thegate electrode of gate structure 20 causes the interruption of 2DEG 14thereby turning the device OFF.

Referring to FIG. 2, in which like numerals identify like features, adevice according to the first embodiment of the present inventionincludes a gate structure having first insulation body 22 disposed overa portion second III-nitride semiconductor body 12, second insulationbody 24 disposed on first insulation body 22, and gate electrode 26. Afield or passivation layer 27 is provided as shown. According to thepresent invention first insulation body 22 and second insulation body 24are selected in order to create a charge trap. That is, charge can betrapped between first insulation body 22 and second insulation body 24.

For example, first insulation body 22 can be Si₃N₄ and second insulationbody 24 can be SiO₂. Or, first insulation body 22 can be composed ofSiO₂ and second insulation body 24 may be composed of Si₃N₄.

In a device according to the present invention, negative charge istrapped between first insulation body 22 and second insulation body 24.The amount of trapped charge can be selected so that 2DEG below gateelectrode 26 is interrupted, thereby rendering the device normally OFF.An application of an appropriate voltage can then restore 2DEG 14 andrender the device ON. Thus, a normally OFF switchable device can beobtained.

In order to trap the negative charge, after the fabrication of thedevice (according to any known method), a bias is applied to gateelectrode 26 to generate the negative charge. This will cause a currentto flow through the insulator (eg, through a tunneling mechanism), uponthe application of a sufficiently high applied electric field. As afurther feature of the invention, this effect may be enhanced if thebias is applied, while the device is heated. The application of heatgenerates the charge which is trapped between the first insulation body22 and second insulation body 24. Temperature, the applied voltage andtime affect how much charge is generated and trapped.

Alternatively, at least one insulation body can be grown with negativecharge and then heated to allow the charge to migrate and become trappedbetween the two insulation bodies. Thus, for example, Si₃N₄ can be grownwith negative charge for this purpose.

As another alternative, Fluorine, Bromine, Iodine, Chlorine, or the likeatoms may be implanted in at least one of the insulation bodies,followed by the application of heat in order to allow charge to migrateto the interface of the insulation bodies.

In addition to being a normally OFF device, a device according to thepresent invention is capable of being programmed to have a variety ofdesirable threshold voltage. That is, the threshold voltage of a deviceaccording to the present invention can be varied by the selection of theappropriate amount of charge.

Furthermore, instead of only two insulation bodies multiple insulationbodies can be stacked in order to reach the desired threshold voltage.Thus, a device according to the present invention can include under gateelectrode 26 thereof any one or a combination of the following:

SiO₂/Si₃N₄;

SiO₂/Si₃N₄/SiO₂;

SiO₂/Si₃N₄/SiO₂/Si₃N₄;

Si₃N₄/SiO₂;

Si₃N₄/SiO₂/Si₃N₄;

Si₃N₄/SiO₂/Si₃N₄/SiO₂; and any combination of the above.

It should be understood that a device according to the present inventionmay be formed over a substrate in any known manner (e.g. over atransition body 8 formed on a substrate 10) as a discrete power device,or may be formed with other devices on a common substrate as a part ofan integrated circuit.

Referring now to FIG. 3, in a device according to the second embodimentof the present invention, first insulation body 22 includes a recess 28,second insulation body 24 is formed over at least the bottom and thesidewalls of recess 28, and gate electrode 26 may be formed at leastinside recess 28 over second insulation body 24. According to thepresent invention, charge is trapped between first insulation body 22and second insulation body 24, preferably along the bottom and thesidewalls of recess 28. As a result, the area devoted to chargeentrapment is increased without increasing the lateral area covered bythe gate structure.

Referring next to FIG. 4, in a device according to the third embodimentof the present invention, a plurality of spaced recesses 30 are formedin first insulation body 22 instead of only one in order to furtherincrease the interface area between first insulation body 22 and secondinsulation body 24, and thus allow for a larger charge trapping capacitybetween the two bodies.

Although the present invention has been described in relation toparticular embodiments thereof, many other variations and modificationsand other uses will become apparent to those skilled in the art. It ispreferred, therefore, that the present invention be limited not by thespecific disclosure herein, but only by the appended claims.

What is claimed is:
 1. A III-nitride semiconductor device comprising: afirst III-nitride semiconductor body comprising GaN; a secondIII-nitride semiconductor body comprising AlGaN and disposed over saidfirst III-nitride semiconductor body to form a two dimensional electrongas; first and second power electrodes coupled to said secondIII-nitride semiconductor body; a gate electrode electrically insulatedby a gate insulation body from said second III-nitride semiconductorbody, wherein said gate insulation body comprises only one insulationbody, and wherein a charge is trapped within said only one insulationbody, said charge adjusting a threshold voltage of said III-nitridesemiconductor device.
 2. The III-nitride semiconductor device of claim1, wherein said threshold voltage is adjusted so as to cause saidIII-nitride semiconductor device to be normally OFF.
 3. The III-nitridesemiconductor device of claim 1, wherein said only one insulation bodycomprises silicon dioxide.
 4. The III-nitride semiconductor device ofclaim 1, wherein said only one insulation body comprises siliconnitride.
 5. The III-nitride semiconductor device of claim 1, whereinsaid only one insulation body comprises a recess.
 6. The III-nitridesemiconductor device of claim 1, wherein said charge is formed by adopant selected from the group consisting of Fluorine, Chlorine,Bromine, and Iodine.
 7. The III-nitride semiconductor device of claim 1,wherein said charge is formed by a combination of dopants, wherein saiddopants are selected from the group consisting of Fluorine, Chlorine,Bromine, and Iodine.
 8. A III-nitride semiconductor device comprising: afirst III-nitride semiconductor body comprising GaN; a secondIII-nitride semiconductor body comprising AlGaN and disposed over saidfirst III-nitride semiconductor body to form a two dimensional electrongas; first and second power electrodes coupled to said secondIII-nitride semiconductor body; a gate electrode electrically insulatedby a gate insulation body from said second III-nitride semiconductorbody, wherein said gate insulation body comprises only one insulationbody, and wherein a charge is trapped between said only one insulationbody and said second III-nitride semiconductor body, said chargeadjusting a threshold voltage of said III-nitride semiconductor device.9. The III-nitride semiconductor device of claim 8, wherein saidthreshold voltage is adjusted so as to cause said III-nitridesemiconductor device to be normally OFF.
 10. The III-nitridesemiconductor device of claim 8, wherein said only one insulation bodycomprises silicon dioxide.
 11. The III-nitride semiconductor device ofclaim 8, wherein said only one insulation body comprises siliconnitride.
 12. The III-nitride semiconductor device of claim 8, whereinsaid only one insulation body comprises a recess.
 13. The III-nitridesemiconductor device of claim 8, wherein said charge is formed by adopant selected from the group consisting of Fluorine, Chlorine,Bromine, and Iodine.
 14. The III-nitride semiconductor device of claim8, wherein said charge is formed by a combination of dopants, whereinsaid dopants are selected from the group consisting of Fluorine,Chlorine, Bromine, and Iodine.
 15. A III-nitride semiconductor devicecomprising: a first III-nitride semiconductor body comprising GaN; asecond III-nitride semiconductor body comprising AlGaN and disposed oversaid first III-nitride semiconductor body to form a two dimensionalelectron gas; first and second power electrodes coupled to said secondIII-nitride semiconductor body; a gate electrode electrically insulatedby a gate insulation body from said second III-nitride semiconductorbody, wherein said gate insulation body comprises only one insulationbody, and wherein a charge is trapped between said only one insulationbody and said gate electrode, said charge adjusting a threshold voltageof said III-nitride semiconductor device.
 16. The III-nitridesemiconductor device of claim 15, wherein said threshold voltage isadjusted so as to cause said III-nitride semiconductor device to benormally OFF.
 17. The III-nitride semiconductor device of claim 15,wherein said only one insulation body comprises silicon dioxide.
 18. TheIII-nitride semiconductor device of claim 15, wherein said only oneinsulation body comprises silicon nitride.
 19. The III-nitridesemiconductor device of claim 15, wherein said charge is formed by adopant selected from the group consisting of Fluorine, Chlorine,Bromine, and Iodine.
 20. The III-nitride semiconductor device of claim15, wherein said charge is formed by a combination of dopants, whereinsaid dopants are selected from the group consisting of Fluorine,Chlorine, Bromine, and Iodine.